Central Semiconductor Corp. Single Bipolar Transistors 2N5551 TIN/LEAD

The 2N5551 is a silicon NPN transistor designed for high voltage amplifier applications, housed in a TO-92 case. It has a collector-emitter voltage rating of 160 V, a continuous collector current of 600 mA, and a power dissipation of 625 mW at 25°C. The collector-base voltage is 180 V, and the emitter-base voltage is 6.0 V. Operating and storage junction temperatures range from -65°C to +150°C. The thermal resistance from junction to ambient is 200°C/W. Current gain (hFE) ranges from 80 to 250 at 5 V collector-emitter voltage and 10 mA collector current. The transition frequency is 100 to 300 MHz at 10 V and 10 mA. Collector-emitter saturation voltage is 0.20 V at 50 mA collector and 5 mA base current. The device meets RoHS specifications.