Central Semiconductor Corp. Bipolar Transistors - BJT 2N5550

The 2N5550 is an NPN silicon transistor designed for high voltage amplifier applications in a TO-92 package. It has a collector-base voltage rating of 160 V, a collector-emitter voltage rating of 140 V, and a continuous collector current of 600 mA. Power dissipation is 625 mW at ambient temperature and 1.0 W at a case temperature of 25°C. The operating and storage junction temperature range is -65°C to +150°C. The thermal resistance from junction to ambient is 200 °C/W. Current gain (hFE) ranges from 60 to 250 depending on collector current. The transition frequency (fT) is 100 MHz minimum at 10 mA collector current. Collector-base capacitance is 6.0 pF maximum at 10 V reverse bias. The device is RoHS compliant and meets AEC-Q200 automotive qualification standards.