Central Semiconductor Corp. Single Bipolar Transistors 2N5550 TRE TIN/LEAD

The 2N5550 is an NPN silicon transistor in a TO-92 package, designed for high-voltage amplifier applications. It has a collector-emitter voltage rating of 140 V, a continuous collector current of 600 mA, and a power dissipation of 625 mW at 25°C. The thermal resistance from junction to ambient is 200 °C/W. Current gain (hFE) ranges from 60 to 250 depending on collector current, with a transition frequency of 100 to 300 MHz. The collector-base voltage is 160 V, and the emitter-base voltage is 6.0 V. The junction and storage temperature range is -65°C to +150°C. The part includes tin/lead plating as indicated by the TIN/LEAD suffix.