The 2N5550 is a silicon NPN transistor designed for high voltage amplifier applications in a TO-92 package. It has a collector-emitter voltage rating of 140 V, a continuous collector current of 600 mA, and a power dissipation of 625 mW at 25°C. The transistor has a thermal resistance of 200 °C/W and an operating junction temperature range of -65 to +150°C. Current gain (hFE) ranges from 60 to 250 depending on bias conditions, with a transition frequency (fT) of up to 300 MHz. The device meets RoHS compliance, as indicated by the PBFREE suffix, and is marked with the full part number.
140V 600MA 625MW TH TRANSISTOR-S
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1514-2N5550TREPBFREETR-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | NPN |