Central Semiconductor Corp. Single Bipolar Transistors 2N5550 TRE PBFREE

Description
140V 600MA 625MW TH TRANSISTOR-S
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Description
140V 600MA 625MW TH TRANSISTOR-S
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Datasheet
Datasheet Summary
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The 2N5550 is a silicon NPN transistor designed for high voltage amplifier applications in a TO-92 package. It has a collector-emitter voltage rating of 140 V, a continuous collector current of 600 mA, and a power dissipation of 625 mW at 25°C. The transistor has a thermal resistance of 200 °C/W and an operating junction temperature range of -65 to +150°C. Current gain (hFE) ranges from 60 to 250 depending on bias conditions, with a transition frequency (fT) of up to 300 MHz. The device meets RoHS compliance, as indicated by the PBFREE suffix, and is marked with the full part number.

Datasheet Summary
Powered by GS/AI

The 2N5550 is a silicon NPN transistor designed for high voltage amplifier applications in a TO-92 package. It has a collector-emitter voltage rating of 140 V, a continuous collector current of 600 mA, and a power dissipation of 625 mW at 25°C. The transistor has a thermal resistance of 200 °C/W and an operating junction temperature range of -65 to +150°C. Current gain (hFE) ranges from 60 to 250 depending on bias conditions, with a transition frequency (fT) of up to 300 MHz. The device meets RoHS compliance, as indicated by the PBFREE suffix, and is marked with the full part number.

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Single Bipolar Transistors - 1514-2N5550TREPBFREETR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1514-2N5550TREPBFREETR-ND
Single Bipolar Transistors 1514-2N5550TREPBFREETR-ND
140V 600MA 625MW TH TRANSISTOR-S

140V 600MA 625MW TH TRANSISTOR-S

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 1514-2N5550TREPBFREETR-ND
Product Name Single Bipolar Transistors
Polarity NPN
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