Central Semiconductor Corp. Single Bipolar Transistors 2N5550 TIN/LEAD

The 2N5550 is a silicon NPN transistor designed for high voltage amplifier applications, packaged in a TO-92 case. It has a collector-emitter voltage rating of 140 V, a continuous collector current of 600 mA, and a power dissipation of 625 mW at 25°C. The collector-base voltage is 160 V, and the emitter-base voltage is 6.0 V. Operating and storage junction temperatures range from -65°C to +150°C. The device meets RoHS compliance when ordered with the PBFREE suffix; the TIN/LEAD suffix indicates a lead-tin plating option. Thermal resistance is 200 °C/W from junction to ambient. Current gain (hFE) ranges from 60 to 250 depending on operating conditions.