Central Semiconductor Corp. Single Bipolar Transistors 2N5550 APM TIN/LEAD

The 2N5550 is a silicon NPN transistor designed for high voltage amplifier applications, housed in a TO-92 package. It has a collector-emitter voltage rating of 140 V, a continuous collector current of 600 mA, and a power dissipation of 625 mW at 25°C. The junction temperature range is -65°C to +150°C, and thermal resistance ΘJA is 200°C/W. Current gain (hFE) ranges from 60 to 250 depending on collector current, with a transition frequency of 100 to 300 MHz. Collector-base leakage current is specified up to 100 nA at 100V and 25°C. The part supports PbSn plating, as indicated by the TIN/LEAD suffix, which is an optional ordering variant. Specifications are consistent with the 2N5550 series.