Central Semiconductor Corp. Bipolar Transistors - BJT 2N5447

The 2N5447 is a PNP silicon transistor in a JEDEC TO-92-18R package, designed for audio frequency and amplifier applications. It has a collector-base voltage rating of 40 V, a collector-emitter voltage of 25 V, and a maximum collector current of 200 mA. Power dissipation is rated at 625 mW with a thermal resistance of 200 °C/W. The operating and storage junction temperature range is -65 to +150 °C. Current gain (hFE) ranges from 60 to 300 at VCE=5.0 V and IC=50 mA. The cutoff frequency (fT) is 100 MHz under identical test conditions. The device meets no stated standards or qualifications beyond its electrical and thermal specifications.