Central Semiconductor Corp. Bipolar Transistors - BJT 2N5429

Description
Bipolar Transistors - BJT NPN 100Vcbo 100Vceo 7.0A 40W 0.7Vce
Description
Bipolar Transistors - BJT NPN 100Vcbo 100Vceo 7.0A 40W 0.7Vce
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NPN bipolar transistor in TO-66 case with 100 V collector-base voltage, 100 V collector-emitter voltage, 7.0 A collector current, 40 W power dissipation, and 0.7 V collector-emitter saturation voltage at 2.0 A collector current. Minimum DC current gain of 100 at 2.0 A collector current and 1.0 V collector-emitter voltage. Transition frequency is 30 MHz.

Datasheet Summary
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NPN bipolar transistor in TO-66 case with 100 V collector-base voltage, 100 V collector-emitter voltage, 7.0 A collector current, 40 W power dissipation, and 0.7 V collector-emitter saturation voltage at 2.0 A collector current. Minimum DC current gain of 100 at 2.0 A collector current and 1.0 V collector-emitter voltage. Transition frequency is 30 MHz.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N5429
Bipolar Transistors - BJT 2N5429
Bipolar Transistors - BJT NPN 100Vcbo 100Vceo 7.0A 40W 0.7Vce

Bipolar Transistors - BJT NPN 100Vcbo 100Vceo 7.0A 40W 0.7Vce

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N5429
Product Name Bipolar Transistors - BJT
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