Central Semiconductor Corp. Bipolar Transistors - BJT 2N5428

NPN bipolar transistor for general-purpose amplification and switching, housed in a TO-66 package. It has a collector-base voltage rating of 80 V, a collector-emitter voltage rating of 80 V, a continuous collector current of 7.0 A, a power dissipation of 40 W, and a collector-emitter saturation voltage of 0.7 V at a collector current of 2.0 A. The device has a current gain (hFE) minimum of 60 and a transition frequency of 30 MHz. It meets RoHS compliance when ordered with the PBFREE suffix.