Central Semiconductor Corp. Single Bipolar Transistors 2N5401 TIN/LEAD

The 2N5401 is a silicon PNP transistor designed for high voltage amplifier applications, housed in a TO-92 package. It features a collector-emitter voltage rating of 150 V, a continuous collector current of 600 mA, and a power dissipation of 625 mW at 25°C. The transistor has a current gain (hFE) ranging from 60 to 240 at VCE=5.0 V and IC=10 mA, with a transition frequency of up to 300 MHz. The emitter-base voltage is rated at 5.0 V, and the junction temperature range is -65°C to +150°C. The collector-base breakdown voltage is 160 V. The device is characterized by a collector-emitter saturation voltage of 0.5 V at IC=50 mA and IB=5.0 mA.