Central Semiconductor Corp. Bipolar Transistors - BJT 2N5400

The 2N5400 is a silicon PNP transistor designed for high voltage amplifier applications in a TO-92 case. It has a collector-base voltage rating of 130 V, a collector-emitter voltage rating of 120 V, and a continuous collector current of 600 mA. The device dissipates up to 625 mW at 25°C and has a thermal resistance of 200 °C/W. Operating and storage junction temperatures range from -65°C to +150°C. Current gain (hFE) ranges from 30 to 240 depending on operating conditions, and the transition frequency is up to 400 MHz. The transistor meets no specified qualification standards beyond its electrical and thermal ratings.