Central Semiconductor Corp. Bipolar Transistors - BJT 2N5375

The 2N5375 is a PNP silicon transistor in a TO-92-18R case, designed for general purpose, medium current switching applications. It has a collector-base voltage rating of 40 V, a collector-emitter voltage rating of 30 V, an emitter-base voltage rating of 5.0 V, and a continuous collector current of 500 mA. The power dissipation is 360 mW. The transistor has a minimum DC current gain (hFE) of 40 at a collector current of 150 mA and a collector-emitter voltage of 10 V, and a transition frequency of 150 MHz. The saturation voltage VCE(sat) is 300 mV at a collector current of 150 mA and base current of 15 mA. The operating and storage junction temperature range is from -65 to +150 °C.