Central Semiconductor Corp. Bipolar Transistors - BJT 2N5374

The 2N5374 is a PNP silicon transistor designed for general purpose, medium current switching applications. It is packaged in a TO-92-18R case. Maximum ratings include a collector-base voltage of 60 V, collector-emitter voltage of 30 V, emitter-base voltage of 5.0 V, continuous collector current of 500 mA, and power dissipation of 360 mW. Operating and storage junction temperatures range from -65°C to +150°C. Electrical characteristics include a current gain (hFE) of 200 to 400 at VCE=10 V and IC=150 mA, collector-emitter saturation voltage of 300 mV at IC=150 mA and IB=15 mA, and a transition frequency of 150 MHz. The device meets no specified industry standards beyond its rated performance.