The 2N5366 is a silicon PNP epitaxial planar transistor in a TO-92 package, designed for general purpose switching and amplifier applications. It has a collector-base voltage rating of 40 V, a collector-emitter voltage rating of 40 V, and a continuous collector current of 300 mA. Power dissipation is 625 mW, with a thermal resistance of 200 °C/W. The operating and storage junction temperature range is -65 to +150 °C. Current gain (hFE) ranges from 80 to 300 at VCE=10 V and IC=2.0 mA, and from 100 to 300 at VCE=1.0 V and IC=50 mA. Transition frequency is 250 MHz at VCE=10 V and IC=2.0 mA. The part number 2N5366 APM TIN/LEAD includes a tin/lead plating suffix, but the base part meets these specifications.
40V 300MA 625MW TH TRANSISTOR-SM
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1514-2N5366APMTIN/LEADTB-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | PNP |