Central Semiconductor Corp. Bipolar Transistors - BJT 2N5337

The 2N5337 is a silicon NPN transistor in a TO-39 case designed for power amplifier and switching applications requiring high current and low saturation voltage. It has a continuous collector current rating of 5.0 A, a collector-emitter voltage rating of 100 V, and a power dissipation of 6.0 W. The thermal resistance from junction to case is 29 °C/W. At 2.0 A collector current, the collector-emitter saturation voltage is typically 0.7 V and the base-emitter saturation voltage is 1.2 V. At 5.0 A, the collector-emitter saturation voltage is 1.2 V and the base-emitter saturation voltage is 1.8 V. The current gain (hFE) ranges from 60 to 240 at 2.0 A and 2.0 V collector-emitter bias, and is a minimum of 40 at 5.0 A. The transition frequency is 30 MHz. The operating and storage junction temperature range is from -65 °C to +200 °C.