Central Semiconductor Corp. Bipolar Transistors - BJT 2N5323

The 2N5323 is a PNP silicon power transistor in a TO-39 case, designed for amplifier and switching applications. It has a collector-emitter voltage rating of 50 V, a collector-base voltage rating of 75 V, a continuous collector current of 2.0 A, and a power dissipation of 10 W. The emitter-base voltage is rated at 5.0 V, with a maximum base current of 1.0 A. The operating and storage junction temperature ranges from -65°C to +200°C. Thermal resistance is 17.5 °C/W from junction to case and 175 °C/W from junction to ambient. Saturation voltage at IC = 500 mA and IB = 50 mA is up to 1.2 V, with a DC current gain (hFE) of 40 to 250 at VCE = 4.0 V and IC = 500 mA. Turn-on and turn-off times are 100 ns and 1.0 μs respectively under specified test conditions.