Central Semiconductor Corp. Bipolar Transistors - BJT 2N5322

The 2N5322 is a PNP silicon power transistor in a TO-39 package, designed for amplifier and switching applications. It has a collector-base voltage rating of 100 V, collector-emitter voltage of 75 V, emitter-base voltage of 5.0 V, continuous collector current of 2.0 A, and power dissipation of 10 W. Operating and storage junction temperatures range from -65 to +200 °C. Thermal resistance is 17.5 °C/W from junction to case and 175 °C/W from junction to ambient. At IC=500 mA and IB=50 mA, the collector-emitter saturation voltage is ≤0.7 V, and the DC current gain (hFE) ranges from 40 to 250 at VCE=4.0 V. Turn-on time is ≤100 ns and turn-off time is ≤1.0 μs under specified conditions.