Central Semiconductor Corp. Transistor 2N5306

Description
TRANSISTOR, 2N SERIES, SINGLE CONFIGURATION, 25 V, 0.3 AMP, . FREE 2 YEAR RADWELL WARRANTY
  • Transistor - 119888198 - Radwell International
    Radwell International
  • TRANSISTORS - Transistors (BJT) - Single - 2N5306 - 762253-2N5306 - Win Source Electronics
    Win Source Electronics
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Description
TRANSISTOR, 2N SERIES, SINGLE CONFIGURATION, 25 V, 0.3 AMP, . FREE 2 YEAR RADWELL WARRANTY
Request a Quote Datasheet

Suppliers

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Product
Description
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Transistor - 119888198 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
119888198
Transistor 119888198
TRANSISTOR, 2N SERIES, SINGLE CONFIGURATION, 25 V, 0.3 AMP, . FREE 2 YEAR RADWELL WARRANTY

TRANSISTOR, 2N SERIES, SINGLE CONFIGURATION, 25 V, 0.3 AMP, . FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
TRANSISTORS - Transistors (BJT) - Single - 2N5306 - 762253-2N5306 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N5306
762253-2N5306
TRANSISTORS - Transistors (BJT) - Single - 2N5306 762253-2N5306
Manufacturer: Central Semiconductor Corp Win Source Part Number: 762253-2N5306 Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: -65°C ~ 150°C (TJ) Package: TO-226-3, TO-92-3 (TO-226AA) Power - Max: 625mW Transistor Type: NPN - Darlington Frequency - Transition: 60MHz Family Name: 2N5306 Categories: Discrete Semiconductor Products Manufacturer Package: TO-92 Current - Collector (Ic) (Maximum): 300mA Voltage - Collector Emitter Breakdown (Maximum): 25V Vce Saturation (Maximum) @ Ib, Ic: 1.4V @ 200μA, 200mA Current - Collector Cutoff (Maximum): 100nA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 7000 @ 2mA, 5V Alternative Parts (Cross-Reference): 2N5306-T; 2N5306; ; Introduction Date: May 18, 2001 ECCN: EAR99 Estimated EOL Date: 2027 Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance

Manufacturer: Central Semiconductor Corp
Win Source Part Number: 762253-2N5306
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: -65°C ~ 150°C (TJ)
Package: TO-226-3, TO-92-3 (TO-226AA)
Power - Max: 625mW
Transistor Type: NPN - Darlington
Frequency - Transition: 60MHz
Family Name: 2N5306
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-92
Current - Collector (Ic) (Maximum): 300mA
Voltage - Collector Emitter Breakdown (Maximum): 25V
Vce Saturation (Maximum) @ Ib, Ic: 1.4V @ 200μA, 200mA
Current - Collector Cutoff (Maximum): 100nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 7000 @ 2mA, 5V
Alternative Parts (Cross-Reference): 2N5306-T; 2N5306; ;
Introduction Date: May 18, 2001
ECCN: EAR99
Estimated EOL Date: 2027
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance

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VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
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2N5306
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Technical Specifications

  Radwell International Win Source Electronics VAST STOCK CO., LIMITED
Product Category RF Transistors Transistors Darlington Transistors
Product Number 119888198 762253-2N5306 2N5306
Product Name Transistor TRANSISTORS - Transistors (BJT) - Single - 2N5306 Darlington Transistors
Polarity NPN
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