Central Semiconductor Corp. Bipolar Transistors - BJT 2N5301

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Bipolar Transistors - BJT NPN Hi-Pwr Amp
Description
Bipolar Transistors - BJT NPN Hi-Pwr Amp
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NPN bipolar junction transistor for high-power amplification in a TO-3 case, with a continuous collector current of 30 A, power dissipation of 200 W, collector-emitter voltage rating of 60 V, and current gain (hFE) between 15 and 60 at a collector current of 15 A. Features a collector-emitter saturation voltage of 4.0 V at 30 A and a transition frequency of 4.0 MHz.

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NPN bipolar junction transistor for high-power amplification in a TO-3 case, with a continuous collector current of 30 A, power dissipation of 200 W, collector-emitter voltage rating of 60 V, and current gain (hFE) between 15 and 60 at a collector current of 15 A. Features a collector-emitter saturation voltage of 4.0 V at 30 A and a transition frequency of 4.0 MHz.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N5301
Bipolar Transistors - BJT 2N5301
Bipolar Transistors - BJT NPN Hi-Pwr Amp

Bipolar Transistors - BJT NPN Hi-Pwr Amp

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N5301
Product Name Bipolar Transistors - BJT
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