Central Semiconductor Corp. Bipolar Transistors - BJT 2N5298

The 2N5298 is an NPN silicon transistor in a TO-220 package designed for power amplifier and medium-speed switching applications. It has a continuous collector current rating of 4.0 A, a collector-emitter voltage of 60 V, and a power dissipation of 36 W. The thermal resistance from junction to case is 3.47 °C/W and from junction to ambient is 70 °C/W. The operating and storage junction temperature range is -65 to +150 °C. The transistor exhibits a saturated collector-emitter voltage of up to 1.0 V at 1.5 A collector current and a current gain (hFE) of 20 to 80 at 1.5 A and 4.0 V collector-emitter bias. The case features a collector tab, and the device is marked with its full part number.