Central Semiconductor Corp. Bipolar Transistors - BJT 2N5296

Description
Bipolar Transistors - BJT 60Vcbo 60Vcev 4.0A 50Vcer 40Vceo 36W
Description
Bipolar Transistors - BJT 60Vcbo 60Vcev 4.0A 50Vcer 40Vceo 36W
Datasheet
Datasheet Summary
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The 2N5296 is an NPN silicon transistor in a TO-220 package, designed for power amplifier and medium speed switching applications. It has a collector-base voltage rating of 60 V, a collector-emitter voltage rating of 40 V, and a continuous collector current of 4.0 A. The device dissipates up to 36 W and has a thermal resistance of 3.47 °C/W from junction to case. Operating and storage junction temperatures range from -65 to +150 °C. Current gain (hFE) ranges from 30 to 120 at IC=1.0 A and VCE=4.0 V. The transition frequency is 0.8 MHz at IC=200 mA. Switching times are up to 5.0 μs for turn-on and 15 μs for turn-off. The part is RoHS compliant and meets AEC-Q200 qualification standards.

Datasheet Summary
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The 2N5296 is an NPN silicon transistor in a TO-220 package, designed for power amplifier and medium speed switching applications. It has a collector-base voltage rating of 60 V, a collector-emitter voltage rating of 40 V, and a continuous collector current of 4.0 A. The device dissipates up to 36 W and has a thermal resistance of 3.47 °C/W from junction to case. Operating and storage junction temperatures range from -65 to +150 °C. Current gain (hFE) ranges from 30 to 120 at IC=1.0 A and VCE=4.0 V. The transition frequency is 0.8 MHz at IC=200 mA. Switching times are up to 5.0 μs for turn-on and 15 μs for turn-off. The part is RoHS compliant and meets AEC-Q200 qualification standards.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N5296
Bipolar Transistors - BJT 2N5296
Bipolar Transistors - BJT 60Vcbo 60Vcev 4.0A 50Vcer 40Vceo 36W

Bipolar Transistors - BJT 60Vcbo 60Vcev 4.0A 50Vcer 40Vceo 36W

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N5296
Product Name Bipolar Transistors - BJT
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