The 2N5194 is a silicon PNP power transistor in a TO-126 package, designed for medium-power amplifier and switching applications. It has a collector-emitter voltage rating of 60 V, a continuous collector current of 4.0 A, and a power dissipation of 40 W at TC=25°C. The device features a thermal resistance of 3.12 °C/W and an operating junction temperature range of -65 to +150 °C. Its current gain (hFE) is specified between 25 and 100 at VCE=2.0 V and IC=1.5 A. The part is marked with its full part number and has a collector, emitter, and base pinout in that order. The TIN/LEAD suffix indicates a tin/lead plating option available upon special order. This part is listed as discontinued and replaced by the 2N5195 SL H.
Bipolar (BJT) Transistor PNP 60V 4A 2MHz 40W Through Hole TO-126
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1514-2N5194TIN/LEAD-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | PNP |