Central Semiconductor Corp. TRANSISTORS - RF Transistors (BJT) - 2N5179 2N5179

Description
Manufacturer: Central Semiconductor Corp Win Source Part Number: 143550-2N5179 Packaging: Bulk Mounting: Through Hole Gain: 15dB Frequency - Transition: 2GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 4.5dB @ 200MHz Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-72 Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 25 @ 3mA, 1V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited
  • TRANSISTORS - RF Transistors (BJT) - 2N5179 - 143550-2N5179 - Win Source Electronics
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Description
Manufacturer: Central Semiconductor Corp Win Source Part Number: 143550-2N5179 Packaging: Bulk Mounting: Through Hole Gain: 15dB Frequency - Transition: 2GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 4.5dB @ 200MHz Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-72 Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 25 @ 3mA, 1V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited
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TRANSISTORS - RF Transistors (BJT) - 2N5179 - 143550-2N5179 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - 2N5179
143550-2N5179
TRANSISTORS - RF Transistors (BJT) - 2N5179 143550-2N5179
Manufacturer: Central Semiconductor Corp Win Source Part Number: 143550-2N5179 Packaging: Bulk Mounting: Through Hole Gain: 15dB Frequency - Transition: 2GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 4.5dB @ 200MHz Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-72 Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 25 @ 3mA, 1V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited

Manufacturer: Central Semiconductor Corp
Win Source Part Number: 143550-2N5179
Packaging: Bulk
Mounting: Through Hole
Gain: 15dB
Frequency - Transition: 2GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 4.5dB @ 200MHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 200°C (TJ)
Case / Package: TO-72
Maximum Current Collector: 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 25 @ 3mA, 1V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited

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VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N5179
Bipolar Transistors - BJT 2N5179
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Bipolar Transistors - BJT NPN VHF Amp

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Transistors Bipolar RF Transistors
Product Number 143550-2N5179 2N5179
Product Name TRANSISTORS - RF Transistors (BJT) - 2N5179 Bipolar Transistors - BJT
Polarity NPN; NPN
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