Central Semiconductor Corp. JFETs 2N5115

The 2N5115 is a silicon P-channel JFET designed for switching applications in a TO-18 package. It has a gate-drain and gate-source voltage rating of 30 V, a maximum power dissipation of 500 mW, and operates over a junction temperature range of -65 to +200 °C. The drain-source saturation current (IDSS) at 15 V is specified between 15 mA and 60 mA. The gate-source cutoff voltage (VGS(OFF)) at 15 V and 1 nA drain current ranges from 3.0 V to 6.0 V. On-resistance (rDS(ON)) is up to 100 Ω at 1.0 mA and 0 V gate bias. Input capacitance (Ciss) is 25 pF at 15 V drain-source voltage and 1.0 MHz. The device has turn-on and turn-off times of up to 30 ns and 38 ns, respectively, under specified test conditions. It meets RoHS requirements.