Central Semiconductor Corp. TRANSISTORS - RF Transistors (BJT) - 2N5059 2N5059

Description
Manufacturer: Central Semiconductor Corp Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1200912-2N5059 Packaging: Bulk Polarity: NPN Gain Bandwidth Product: 160 MHz Categories: RF Transistors(BJT) Case / Package: TO-39 Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited RoHS: Compliant Max Power Dissipation: 5 W Collector Emitter Voltage (VCEO): 250 V Emitter Base Voltage (VEBO): 6 V hFE Min: 10 Continuous Collector Current: 150 mA
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Description
Manufacturer: Central Semiconductor Corp Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1200912-2N5059 Packaging: Bulk Polarity: NPN Gain Bandwidth Product: 160 MHz Categories: RF Transistors(BJT) Case / Package: TO-39 Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited RoHS: Compliant Max Power Dissipation: 5 W Collector Emitter Voltage (VCEO): 250 V Emitter Base Voltage (VEBO): 6 V hFE Min: 10 Continuous Collector Current: 150 mA
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Suppliers

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TRANSISTORS - RF Transistors (BJT) - 2N5059 - 1200912-2N5059 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - 2N5059
1200912-2N5059
TRANSISTORS - RF Transistors (BJT) - 2N5059 1200912-2N5059
Manufacturer: Central Semiconductor Corp Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1200912-2N5059 Packaging: Bulk Polarity: NPN Gain Bandwidth Product: 160 MHz Categories: RF Transistors(BJT) Case / Package: TO-39 Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited RoHS: Compliant Max Power Dissipation: 5 W Collector Emitter Voltage (VCEO): 250 V Emitter Base Voltage (VEBO): 6 V hFE Min: 10 Continuous Collector Current: 150 mA

Manufacturer: Central Semiconductor Corp
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1200912-2N5059
Packaging: Bulk
Polarity: NPN
Gain Bandwidth Product: 160 MHz
Categories: RF Transistors(BJT)
Case / Package: TO-39
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
RoHS: Compliant
Max Power Dissipation: 5 W
Collector Emitter Voltage (VCEO): 250 V
Emitter Base Voltage (VEBO): 6 V
hFE Min: 10
Continuous Collector Current: 150 mA

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Sheung Wan, Hong Kong
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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors Bipolar RF Transistors
Product Number 1200912-2N5059 2N5059
Product Name TRANSISTORS - RF Transistors (BJT) - 2N5059 Bipolar Transistors - BJT
Polarity NPN; NPN
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