Central Semiconductor Corp. TRANSISTORS - RF Transistors (BJT) - 2N5059 2N5059

Description
Manufacturer: Central Semiconductor Corp Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1200912-2N5059 Packaging: Bulk Polarity: NPN Gain Bandwidth Product: 160 MHz Categories: RF Transistors(BJT) Case / Package: TO-39 Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited RoHS: Compliant Max Power Dissipation: 5 W Collector Emitter Voltage (VCEO): 250 V Emitter Base Voltage (VEBO): 6 V hFE Min: 10 Continuous Collector Current: 150 mA
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Description
Manufacturer: Central Semiconductor Corp Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1200912-2N5059 Packaging: Bulk Polarity: NPN Gain Bandwidth Product: 160 MHz Categories: RF Transistors(BJT) Case / Package: TO-39 Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited RoHS: Compliant Max Power Dissipation: 5 W Collector Emitter Voltage (VCEO): 250 V Emitter Base Voltage (VEBO): 6 V hFE Min: 10 Continuous Collector Current: 150 mA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - RF Transistors (BJT) - 2N5059 - 1200912-2N5059 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - 2N5059
1200912-2N5059
TRANSISTORS - RF Transistors (BJT) - 2N5059 1200912-2N5059
Manufacturer: Central Semiconductor Corp Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1200912-2N5059 Packaging: Bulk Polarity: NPN Gain Bandwidth Product: 160 MHz Categories: RF Transistors(BJT) Case / Package: TO-39 Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited RoHS: Compliant Max Power Dissipation: 5 W Collector Emitter Voltage (VCEO): 250 V Emitter Base Voltage (VEBO): 6 V hFE Min: 10 Continuous Collector Current: 150 mA

Manufacturer: Central Semiconductor Corp
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1200912-2N5059
Packaging: Bulk
Polarity: NPN
Gain Bandwidth Product: 160 MHz
Categories: RF Transistors(BJT)
Case / Package: TO-39
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
RoHS: Compliant
Max Power Dissipation: 5 W
Collector Emitter Voltage (VCEO): 250 V
Emitter Base Voltage (VEBO): 6 V
hFE Min: 10
Continuous Collector Current: 150 mA

Buy Now
Singapore
Through-Hole 250V 150mA Bipolar Transistor
283-2N5059
Through-Hole 250V 150mA Bipolar Transistor 283-2N5059
Bipolar Transistor NPN High Voltage 250V 150mA 3-Pin TO-39 Through Hole Box Product overview: 2N5059 from Central Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 250V, 150mA. Search-friendly keywords include transistor, BJT, switching, amplification, Through-Hole, 250V, 150mA, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2N5059 can be used for catalog matching and distributor lookup.

Bipolar Transistor NPN High Voltage 250V 150mA 3-Pin TO-39 Through Hole Box Product overview: 2N5059 from Central Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 250V, 150mA. Search-friendly keywords include transistor, BJT, switching, amplification, Through-Hole, 250V, 150mA, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2N5059 can be used for catalog matching and distributor lookup.

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N5059
Bipolar Transistors - BJT 2N5059
Bipolar Transistors - BJT Small Signal Transistor

Bipolar Transistors - BJT Small Signal Transistor

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1200912-2N5059 283-2N5059 2N5059
Product Name TRANSISTORS - RF Transistors (BJT) - 2N5059 Through-Hole 250V 150mA Bipolar Transistor Bipolar Transistors - BJT
Polarity NPN; NPN NPN
Package Type TO-3; TO-39; SOT3; TO-39 Bulk
Packing Method Bulk; Bulk Bulk
PD 5000 milliwatts 5 milliwatts
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