The 2N5052 is a silicon NPN power transistor in a TO-66 package, designed for general-purpose amplifier and switching applications. It has a collector-base voltage rating of 200 V, a collector-emitter voltage rating of 200 V, a continuous collector current of 2.0 A, and a power dissipation of 40 W. The operating junction temperature range is -65 to +175 °C, with a thermal resistance of 3.76 °C/W. Base-emitter voltage is rated at 6.0 V, and saturation voltage is 5.0 V at a collector current of 2.0 A and base current of 0.4 A. Current gain (hFE) is a minimum of 5.0 at 2.0 A and 5.0 V collector-emitter voltage. The transition frequency is 10 MHz at 250 mA and 10 V. The device meets the AEC-Q200 qualification standard.
Bipolar Transistors - BJT NPN 200Vcbo 200Vceo 6.0Vebo 2.0A 40W
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2N5052 |
| Product Name | Bipolar Transistors - BJT |
