Central Semiconductor Corp. Bipolar Transistors - BJT 2N5051

The 2N5051 is a silicon NPN power transistor in a TO-66 package designed for general purpose amplifier and switching applications. It has a collector-base voltage rating of 150 V, a collector-emitter voltage rating of 150 V, and an emitter-base voltage rating of 6.0 V. The device supports a continuous collector current of 2.0 A and a continuous base current of 1.0 A, with a maximum power dissipation of 40 W. The junction operating temperature ranges from -65°C to +175°C, and the thermal resistance from junction to case is 3.76 °C/W. Current gain (hFE) ranges from 25 to 100 at VCE=5.0 V and IC=0.75 A, and the transition frequency is 10 MHz at VCE=10 V and IC=250 mA. The collector-emitter saturation voltage is 5.0 V at IC=2.0 A and IB=0.4 A. The device meets the AEC-Q200 qualification standard and is RoHS compliant as indicated by the PBFREE suffix option.