Central Semiconductor Corp. Bipolar Transistors - BJT 2N5050

The 2N5050 is a silicon NPN power transistor designed for general purpose amplifier and switching applications, housed in a TO-66 package. It has a collector-base voltage rating of 125 V, a collector-emitter voltage rating of 125 V, and an emitter-base voltage rating of 6.0 V. The device supports a continuous collector current of 2.0 A and a maximum power dissipation of 40 W. The operating junction temperature ranges from -65°C to +175°C, with a thermal resistance of 3.76 °C/W. Electrical characteristics include a saturated collector-emitter voltage of 1.0 V at IC=0.75A and IB=0.1A, and an hFE range of 25 to 100 at IC=0.75A. The transition frequency is 10 MHz at IC=250mA and VCE=10V.