Central Semiconductor Corp. Bipolar Transistors - BJT 2N4912

The 2N4912 is a silicon NPN power transistor in a TO-66 hermetically sealed metal case, designed for general-purpose amplifier and switching applications. It has a collector-base voltage rating of 80 V, a collector-emitter voltage rating of 80 V, and a continuous collector current of 1.0 A. The device dissipates up to 25 W with a thermal resistance of 7.0 °C/W. Operating and storage junction temperatures range from -65 to +200 °C. Current gain (hFE) varies from 10 to 100 depending on collector current, and the transition frequency is 3.0 MHz at 250 mA and 10 MHz. Collector-emitter saturation voltage is 0.6 V at 1.0 A collector current and 100 mA base current.