Central Semiconductor Corp. Bipolar Transistors - BJT 2N4910

Description
Bipolar Transistors - BJT PNP 1.0A 25W 40Vcbo 40Vceo 0.6V
Description
Bipolar Transistors - BJT PNP 1.0A 25W 40Vcbo 40Vceo 0.6V
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NPN and PNP bipolar junction transistors in TO-66 case with a collector current rating of 1.0 A, power dissipation of 25 W, collector-base voltage of 40 V, collector-emitter voltage of 40 V, and collector-emitter saturation voltage of 0.6 V at a collector current of 1.0 A. The device has a minimum DC current gain of 20 and a transition frequency of 3.0 MHz.

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NPN and PNP bipolar junction transistors in TO-66 case with a collector current rating of 1.0 A, power dissipation of 25 W, collector-base voltage of 40 V, collector-emitter voltage of 40 V, and collector-emitter saturation voltage of 0.6 V at a collector current of 1.0 A. The device has a minimum DC current gain of 20 and a transition frequency of 3.0 MHz.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N4910
Bipolar Transistors - BJT 2N4910
Bipolar Transistors - BJT PNP 1.0A 25W 40Vcbo 40Vceo 0.6V

Bipolar Transistors - BJT PNP 1.0A 25W 40Vcbo 40Vceo 0.6V

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N4910
Product Name Bipolar Transistors - BJT
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