Central Semiconductor Corp. Bipolar Transistors - BJT 2N4906

The 2N4906 is a PNP silicon power transistor in a TO-3 case, designed for general-purpose amplifier and switching applications. It has a collector-base voltage rating of 80 V, a collector-emitter voltage rating of 80 V, and can handle a continuous collector current of 5.0 A. Power dissipation is rated at 87.5 W with a thermal resistance of 2.0 °C/W. The junction operating and storage temperature ranges from -65 °C to +200 °C. Electrical characteristics include a collector-emitter saturation voltage of 1.5 V at 5.0 A collector current and 1.0 A base current, with a minimum DC current gain of 7.0 at 5.0 A. The device meets standard thermal and electrical performance criteria for high-power applications.