Central Semiconductor Corp. Bipolar Transistors - BJT 2N4900

Description
Bipolar Transistors - BJT PNP 1.0A 25W 80Vcbo 80Vceo 0.6V
Description
Bipolar Transistors - BJT PNP 1.0A 25W 80Vcbo 80Vceo 0.6V
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2N4900 is a PNP bipolar junction transistor in a TO-66 package with a collector current of 1.0 A, power dissipation of 25 W, collector-base voltage of 80 V, collector-emitter voltage of 80 V, and collector-emitter saturation voltage of 0.6 V at a collector current of 1.0 A. It has a current gain of 20 and transition frequency of 3.0 MHz.

Datasheet Summary
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2N4900 is a PNP bipolar junction transistor in a TO-66 package with a collector current of 1.0 A, power dissipation of 25 W, collector-base voltage of 80 V, collector-emitter voltage of 80 V, and collector-emitter saturation voltage of 0.6 V at a collector current of 1.0 A. It has a current gain of 20 and transition frequency of 3.0 MHz.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N4900
Bipolar Transistors - BJT 2N4900
Bipolar Transistors - BJT PNP 1.0A 25W 80Vcbo 80Vceo 0.6V

Bipolar Transistors - BJT PNP 1.0A 25W 80Vcbo 80Vceo 0.6V

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N4900
Product Name Bipolar Transistors - BJT
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