Bipolar junction transistor in TO-66 case with NPN configuration, rated for 1.0 A continuous collector current, 25 W power dissipation, 60 V collector-base voltage, and 60 V collector-emitter voltage. Features a minimum current gain (hFE) of 20 at 1.0 A collector current and a maximum collector-emitter saturation voltage of 0.6 V. Transition frequency is 3.0 MHz.
Bipolar Transistors - BJT PNP 1.0A 25W 60Vcbo 60Vceo 0.6V
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2N4899 |
| Product Name | Bipolar Transistors - BJT |
