Central Semiconductor Corp. JFET 2N4856A

Description
JFET N-Ch 40Vds 40Vdg 40Vgsr 50mA 360mW
Description
JFET N-Ch 40Vds 40Vdg 40Vgsr 50mA 360mW
Datasheet
Datasheet Summary
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The 2N4856A is an N-channel silicon JFET in a TO-18 package, designed for analog switching and chopper applications. It has a drain-source voltage rating of 40 V, a drain-gate voltage rating of 40 V, and a reverse gate-source voltage rating of 40 V. The maximum power dissipation is 360 mW at 25°C, with an operating and storage junction temperature range of -65 to +200°C. The device has a gate-source cutoff voltage (VGS(OFF)) of 4.0 to 10 V, a drain-source on-resistance (rDS(ON)) of 25 Ω at VGS=0, and a maximum forward gate current of 50 mA. The input capacitance (Ciss) is 10 pF at 1 MHz, and the reverse transfer capacitance (Crss) is 4.0 pF at 1 MHz. Turn-off delay time (toff) is 20 ns under specified test conditions.

Datasheet Summary
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The 2N4856A is an N-channel silicon JFET in a TO-18 package, designed for analog switching and chopper applications. It has a drain-source voltage rating of 40 V, a drain-gate voltage rating of 40 V, and a reverse gate-source voltage rating of 40 V. The maximum power dissipation is 360 mW at 25°C, with an operating and storage junction temperature range of -65 to +200°C. The device has a gate-source cutoff voltage (VGS(OFF)) of 4.0 to 10 V, a drain-source on-resistance (rDS(ON)) of 25 Ω at VGS=0, and a maximum forward gate current of 50 mA. The input capacitance (Ciss) is 10 pF at 1 MHz, and the reverse transfer capacitance (Crss) is 4.0 pF at 1 MHz. Turn-off delay time (toff) is 20 ns under specified test conditions.

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Sheung Wan, Hong Kong
JFET N-Ch 40Vds 40Vdg 40Vgsr 50mA 360mW

JFET N-Ch 40Vds 40Vdg 40Vgsr 50mA 360mW

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Transistors
Product Number 2N4856A
Product Name JFET
Transistor Type JFET
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