Central Semiconductor Corp. Bipolar Transistors - BJT 2N4424 TRE

The 2N4424 is an NPN silicon epitaxial planar transistor in a TO-92 package, designed for general purpose amplifier applications. It has a collector-base voltage rating of 60 V, collector-emitter voltage of 40 V, emitter-base voltage of 5.0 V, continuous collector current of 500 mA, and power dissipation of 625 mW. The operating and storage junction temperature range is -65 to +150 °C, with a thermal resistance of 200 °C/W. Current gain (hFE) ranges from 180 to 540 at VCE=4.5 V and IC=2.0 mA. The TO-92 case has pinout: 1) Emitter, 2) Collector, 3) Base.