Central Semiconductor Corp. Bipolar Transistors - BJT 2N4403

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Bipolar Transistors - BJT PNP Gen Pur SS
Description
Bipolar Transistors - BJT PNP Gen Pur SS
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The 2N4403 is a PNP silicon transistor in a TO-92 package for general purpose amplifier and switching applications. It has a collector-base voltage rating of 40 V, a collector-emitter voltage rating of 40 V, and a continuous collector current of 600 mA. Power dissipation is rated at 625 mW. The operating and storage junction temperature range is -65 to +150 °C. Current gain (hFE) ranges from 100 to 300 at VCE=2.0 V and IC=150 mA, and from 20 to infinity at VCE=2.0 V and IC=500 mA. The transition frequency (fT) is 200 MHz at VCE=10 V and IC=20 mA. Collector-emitter saturation voltage is 0.75 V at IC=500 mA and IB=50 mA.

Datasheet Summary
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The 2N4403 is a PNP silicon transistor in a TO-92 package for general purpose amplifier and switching applications. It has a collector-base voltage rating of 40 V, a collector-emitter voltage rating of 40 V, and a continuous collector current of 600 mA. Power dissipation is rated at 625 mW. The operating and storage junction temperature range is -65 to +150 °C. Current gain (hFE) ranges from 100 to 300 at VCE=2.0 V and IC=150 mA, and from 20 to infinity at VCE=2.0 V and IC=500 mA. The transition frequency (fT) is 200 MHz at VCE=10 V and IC=20 mA. Collector-emitter saturation voltage is 0.75 V at IC=500 mA and IB=50 mA.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N4403
Bipolar Transistors - BJT 2N4403
Bipolar Transistors - BJT PNP Gen Pur SS

Bipolar Transistors - BJT PNP Gen Pur SS

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N4403
Product Name Bipolar Transistors - BJT
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