Central Semiconductor Corp. Bipolar Transistors - BJT 2N4402

The 2N4402 is a PNP silicon transistor designed for general purpose amplifier and switching applications in a TO-92 package. It has a collector-base voltage rating of 40 V, a collector-emitter voltage rating of 40 V, an emitter-base voltage rating of 5.0 V, a continuous collector current of 600 mA, and a power dissipation of 625 mW. The operating and storage junction temperature range is -65 to +150 °C. Current gain (hFE) ranges from 30 to 300 depending on bias conditions, with a transition frequency of 150 MHz. Collector-emitter saturation voltage is 0.4 V at 150 mA and 0.75 V at 500 mA. Base-emitter saturation voltage is 0.75 to 0.95 V at 150 mA and up to 1.3 V at 500 mA. Output and input capacitances are 8.5 pF and 30 pF respectively. Turn-on and turn-off times are 35 ns and 255 ns respectively.