Central Semiconductor Corp. Bipolar Transistors - BJT 2N4400

The 2N4400 is an NPN silicon transistor for general-purpose amplifier and switching applications, housed in a TO-92 package. It has a collector-base voltage rating of 60 V, a collector-emitter voltage of 40 V, a continuous collector current of 600 mA, and a power dissipation of 625 mW. The operating and storage junction temperature range is -65 to +150 °C. Current gain (hFE) ranges from 50 to 150 at VCE=1.0 V and IC=150 mA, and from 20 to 40 at VCE=2.0 V and IC=500 mA. The transition frequency is 200 MHz at VCE=10 V and IC=20 mA. Base-emitter saturation voltage is 0.75 to 0.95 V at IC=150 mA and IB=15 mA, and up to 1.2 V at IC=500 mA and IB=50 mA. Collector-emitter saturation voltage is 0.40 V at IC=150 mA and IB=15 mA, and 0.75 V at IC=500 mA and IB=50 mA.