Central Semiconductor Corp. Single Bipolar Transistors 2N4399 PBFREE

The 2N4399 is a PNP silicon power transistor designed for power amplifier and switching applications, housed in a TO-3 case. It has a collector-emitter voltage rating of 60 V, a continuous collector current of 30 A, and a power dissipation of 200 W at TC=25°C, with 5.0 W dissipation at TA=25°C. The thermal resistance from junction to case is 0.875 °C/W. The transistor has a transition frequency of 4.0 MHz and a current gain (hFE) ranging from 15 to 60 at VCE=2.0V and IC=10A. The collector-emitter saturation voltage is up to 1.0 V at IC=15A and IB=1.5A. The operating and storage junction temperature range is -65 to +200 °C.