Central Semiconductor Corp. Bipolar Transistors - BJT 2N4298

The 2N4298 is a silicon NPN power transistor designed for power amplifier and switching applications, housed in a TO-66 package. It has a collector-base voltage rating of 500 V, a collector-emitter voltage rating of 350 V, a continuous collector current of 1.0 A, and a power dissipation of 20 W. The operating and storage junction temperature range is -65 to +175 °C, with a thermal resistance of 7.5 °C/W. Current gain (hFE) ranges from 25 to 75 at VCE=10 V and IC=50 mA. The collector-emitter saturation voltage is 0.9 V at IC=50 mA and IB=5.0 mA, and the base-emitter saturation voltage is 1.5 V under the same conditions.