Central Semiconductor Corp. Bipolar Transistors - BJT 2N4296

The 2N4296 is a silicon NPN power transistor designed for power amplifier and switching applications in a TO-66 case. It has a collector-base voltage rating of 350 V, a collector-emitter voltage rating of 250 V, and a continuous collector current of 1.0 A. The device dissipates up to 20 W and features a thermal resistance of 7.5 °C/W. The operating and storage junction temperature range is from -65 to +175 °C. Electrical characteristics include a VCE(sat) of 0.9 V at IC=50 mA and IB=5.0 mA, and an hFE range of 35 to 150 at VCE=10 V and IC=50 mA. The emitter-base voltage is rated at 4.0 V, and the collector-base leakage current is 100 µA at 350 V. The transition frequency is 20 MHz at IC=20 mA, and the collector-base capacitance is 6.0 pF at VCB=100 V.