Central Semiconductor Corp. Bipolar Transistors - BJT 2N4238

The 2N4238 is a silicon NPN transistor in a TO-39 metal case, designed for power amplifier, power driver, and switching power supply applications. It has a collector-emitter voltage rating of 60 V, a continuous collector current of 3.0 A, and a power dissipation of 6.0 W. The thermal resistance from junction to case is 29.2 °C/W. The operating and storage junction temperature range is from -65 to +200 °C. The transistor exhibits a minimum DC current gain (hFE) of 30 at IC = 50 mA and 1.0 V VCE, and a transition frequency of 2.0 MHz at IC = 100 mA and VCE = 10 V. The collector-base breakdown voltage is 80 V, and the saturated collector-emitter voltage is 0.6 V at IC = 1.0 A and IB = 0.1 A. The case has three leads: emitter, base, and collector, with full part number marking.