Central Semiconductor Corp. Bipolar Transistors - BJT 2N4232A

The 2N4232A is an NPN silicon power transistor in a TO-66 package, designed for general-purpose amplifier and switching applications. It has a collector-emitter voltage rating of 60 V, a continuous collector current of 5.0 A, and a power dissipation of 75 W. The thermal resistance from junction to case is 2.32 °C/W. Operating and storage junction temperatures range from -65 °C to +200 °C. Current gain (hFE) ranges from 25 to 100 at a collector current of 1.5 A and collector-emitter voltage of 2.0 V. The saturation voltage is 2.0 V at a collector current of 3.0 A and base current of 0.3 A. It meets the AEC-Q200 qualification standard.