Central Semiconductor Corp. Bipolar Transistors - BJT 2N4232

Description
Bipolar Transistors - BJT 3.0A 35W 70Vcbo 60Vceo 2.0V
Description
Bipolar Transistors - BJT 3.0A 35W 70Vcbo 60Vceo 2.0V
Datasheet
Datasheet Summary
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The 2N4232 is a silicon NPN bipolar junction transistor in a TO-66 case, rated for 3.0 A collector current, 35 W power dissipation, 70 V collector-base voltage, and 60 V collector-emitter voltage. It has a minimum DC current gain of 25 at 1.5 A collector current and 3 V collector-emitter saturation voltage, with a transition frequency of 4.0 MHz. The device complies with RoHS standards and is available in lead-free (PBFREE) and tin/lead plating options.

Datasheet Summary
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The 2N4232 is a silicon NPN bipolar junction transistor in a TO-66 case, rated for 3.0 A collector current, 35 W power dissipation, 70 V collector-base voltage, and 60 V collector-emitter voltage. It has a minimum DC current gain of 25 at 1.5 A collector current and 3 V collector-emitter saturation voltage, with a transition frequency of 4.0 MHz. The device complies with RoHS standards and is available in lead-free (PBFREE) and tin/lead plating options.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N4232
Bipolar Transistors - BJT 2N4232
Bipolar Transistors - BJT 3.0A 35W 70Vcbo 60Vceo 2.0V

Bipolar Transistors - BJT 3.0A 35W 70Vcbo 60Vceo 2.0V

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N4232
Product Name Bipolar Transistors - BJT
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