Central Semiconductor Corp. Bipolar Transistors - BJT 2N4231A

The 2N4231A is an NPN silicon power transistor in a TO-66 package, designed for general-purpose amplifier and switching applications. It has a collector-base voltage rating of 40 V, a collector-emitter voltage rating of 40 V, and a continuous collector current rating of 5.0 A. The device dissipates up to 75 W with a thermal resistance of 2.32 °C/W. The emitter-base voltage is 5.0 V, and the operating and storage junction temperature range is from -65 °C to +200 °C. It meets the IEC 60286-3 standard for power transistors and is RoHS compliant as indicated by PBFREE availability for the series. Complementary PNP devices include the 2N6312 series.