Central Semiconductor Corp. Bipolar Transistors - BJT 2N4126 TRE

The 2N4126 is a PNP silicon small signal transistor in a TO-92 package, designed for general purpose amplifier and switching applications. It has a collector-base voltage rating of 25 V, a collector-emitter voltage of 25 V, and an emitter-base voltage of 4.0 V. The continuous collector current is 200 mA, with a power dissipation of 625 mW at ambient temperature. The operating and storage junction temperature ranges from -65°C to +150°C. The transition frequency is 250 MHz at a collector current of 10 mA and a collector voltage of 20 V. The current gain (hFE) at 50 mA collector current and 1.0 V collector-emitter voltage ranges from 60 to 360. The collector-emitter saturation voltage at 50 mA collector current and 5 mA base current is up to 0.4 V.