Central Semiconductor Corp. Bipolar Transistors - BJT 2N4125

The 2N4125 is a silicon PNP transistor in a TO-92 package, designed for general-purpose amplifier and switching applications. It has a collector-emitter voltage rating of 30 V, a collector-base voltage of 30 V, an emitter-base voltage of 4.0 V, and a continuous collector current of 200 mA. The power dissipation is 625 mW at 25°C ambient temperature. The DC current gain (hFE) ranges from 50 to 150 at VCE=1.0 V and IC=2.0 mA, and from 25 to 60 at IC=50 mA. The transition frequency (fT) is 200 MHz at VCE=20 V and IC=10 mA. Operating and storage junction temperatures range from -65°C to +150°C, and thermal resistance from junction to ambient is 200 °C/W. The device meets no specified industry standards.