Central Semiconductor Corp. TRANSISTORS - Transistors (BJT) - Single - 2N4123 2N4123

Description
Manufacturer: Central Semiconductor Corp Win Source Part Number: 1003887-2N4123 Mounting: Through Hole Frequency - Transition: 250MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-92 Maximum Current Collector: 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Max Vce (sat): 300mV @ 5mA, 50mA Collector Cut-off Current(Max): 50nA (ICBO) Typical Gain (hFE) (Min): 50 @ 2mA, 10V Maximum Power Dissipation: 1.5W Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Central Semiconductor Corp Win Source Part Number: 1003887-2N4123 Mounting: Through Hole Frequency - Transition: 250MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-92 Maximum Current Collector: 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Max Vce (sat): 300mV @ 5mA, 50mA Collector Cut-off Current(Max): 50nA (ICBO) Typical Gain (hFE) (Min): 50 @ 2mA, 10V Maximum Power Dissipation: 1.5W Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors (BJT) - Single - 2N4123 - 1003887-2N4123 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N4123
1003887-2N4123
TRANSISTORS - Transistors (BJT) - Single - 2N4123 1003887-2N4123
Manufacturer: Central Semiconductor Corp Win Source Part Number: 1003887-2N4123 Mounting: Through Hole Frequency - Transition: 250MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-92 Maximum Current Collector: 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Max Vce (sat): 300mV @ 5mA, 50mA Collector Cut-off Current(Max): 50nA (ICBO) Typical Gain (hFE) (Min): 50 @ 2mA, 10V Maximum Power Dissipation: 1.5W Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance

Manufacturer: Central Semiconductor Corp
Win Source Part Number: 1003887-2N4123
Mounting: Through Hole
Frequency - Transition: 250MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-92
Maximum Current Collector: 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 30V
Max Vce (sat): 300mV @ 5mA, 50mA
Collector Cut-off Current(Max): 50nA (ICBO)
Typical Gain (hFE) (Min): 50 @ 2mA, 10V
Maximum Power Dissipation: 1.5W
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N4123
Bipolar Transistors - BJT 2N4123
Bipolar Transistors - BJT . .

Bipolar Transistors - BJT . .

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category RF Transistors Bipolar RF Transistors
Product Number 1003887-2N4123 2N4123
Product Name TRANSISTORS - Transistors (BJT) - Single - 2N4123 Bipolar Transistors - BJT
Polarity NPN; NPN
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