The 2N4104 is an NPN silicon transistor designed for low-noise amplifier applications, housed in a TO-18 package. It has a collector-base voltage rating of 60 V, a collector-emitter voltage rating of 60 V, and a continuous collector current of 50 mA. The power dissipation is 300 mW, and the operating and storage junction temperature ranges from -65 °C to +200 °C. The current gain (hFE) ranges from 150 to 800 depending on collector current, with a transition frequency (fT) of 90 to 540 MHz. The noise figure is as low as 1.0 dB at 5 µA and 10 kHz. The part is available with lead-free plating, indicated by the PBFREE suffix.
Bipolar (BJT) Transistor NPN 60V 50mA 540MHz 30mW Surface Mount Die
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1514-2N4104PBFREE-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | NPN |