PNP silicon transistor for small signal and medium power general purpose industrial applications, housed in a TO-39 package. Rated for a collector-emitter voltage of 65 V, continuous collector current of 1.0 A, and power dissipation of 1.0 W at 25°C ambient. Current gain (hFE) ranges from 40 to 140 at 150 mA collector current and 10 V collector-emitter voltage. Transition frequency is 60 MHz. Operating and storage junction temperature range is -65°C to +200°C. Meets RoHS compliance when specified with PBFREE suffix.
Bipolar (BJT) Transistor PNP 65V 1A 60MHz 1W Through Hole TO-39
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1514-2N4036PBFREE-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | PNP |
